Sapphire Optical Windows
GENERAL Chemical Formula Al2O3 Crystal Stucture
Hexagonal System ((hk o 1) Unit Cell Dimension a=4.758 Å,Å c=12.991 Å, c:a=2.730
PHYSICAL Metric English (Imperial) Density 3.98 g/cc 0.144 lb/in3
Hardness 1525 - 2000 Knoop, 9 mhos 3700° F Melting Point
| GENERAL |
| Chemical Formula |
|
Al2O3 |
| Crystal Stucture |
|
Hexagonal System ((hk o 1) |
| Unit Cell Dimension |
|
a=4.758 Å,Å c=12.991 Å, c:a=2.730 |
| PHYSICAL |
| |
|
Metric |
English (Imperial) |
| Density |
|
3.98 g/cc |
0.144 lb/in3 |
| Hardness |
|
1525 - 2000 Knoop, 9 mhos |
3700° F |
| Melting Point |
|
2310 K (2040° C) |
|
| STRUCTURAL |
| Tensile Strength |
|
275 MPa to 400 MPa |
40,000 to 58,000 psi |
| |
at 20° |
400 MPa |
58,000 psi (design min.) |
| |
at 500° C |
275 MPa |
40,000 psi (design min.) |
| |
at 1000° C |
355 MPa |
52,000 psi (design min.) |
| Flexural Stength |
|
480 MPa to 895 MPa |
70,000 to 130,000 psi |
| Compression Strength |
|
2.0 GPa (ultimate) |
300,000 psi (ultimate) |
Gallium Nitride Wafer | Gallium Nitride (GaN) on Silicon (Si) Epitaxy Wafer
Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.
Used as a window material
Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)
Stock Sapphire Wafer Catalog
Standard wafer
2 inch C-plane sapphire wafer SSP/DSP
3 inch C-plane sapphire wafer SSP/DSP
4 inch C-plane sapphire wafer SSP/DSP
6 inch C-plane sapphire wafer SSP/DSP |
Special Cut
A-plane (1120) sapphire wafer
R-plane (1102) sapphire wafer
M-plane (1010) sapphire wafer
N-plane (1123) sapphire wafer
C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis
Other customized orientation |
Customized Size
10*10mm sapphire wafer
20*20mm sapphire wafer
Ultra thin (100um) sapphire wafer
8 inch sapphire wafer |
Patterned Sapphire Substrate (PSS)
2 inch C-plane PSS
4 inch C-plane PSS |
| 2inch |
DSP C-AXIS 0.1mm/ 0.175mm/0.2mm/0.3mm/0.4mm/0.5mm/1.0mmt SSP C-axis 0.2/0.43mm(DSP&SSP) A-axis/M-axis/R-axis 0.43mm |
| 3inch |
DSP/ SSP C-axis 0.43mm/0.5mm |
| 4Inch |
dsp c-axis 0.4mm/ 0.5mm/1.0mmssp c-axis 0.5mm/0.65mm/1.0mmt |
| 6inch |
ssp c-axis 1.0mm/1.3mmm dsp c-axis 0.65mm/ 0.8mm/1.0mmt |
characteristics of a sapphire substrate
A substance used in the manufacturing of semiconductor devices is a sapphire substrate. For high-tech applications, its excellent conductivity and thermal stability make it the ideal material. We will go over some of the characteristics of sapphire wafers and GaN on sapphire in this article. We will also talk about the electrical conductivity and thermal stability of sapphire wafers.
C-plane wafers of sapphire
It is common practice to produce wide-band-gap oxide and III-V nitride semiconductor films on C-plane sapphire wafer materials. Through the use of Molecular Beam Epitaxy and Metal-Organic Vapour Deposition, they are also employed to create LED epitaxial wafers.
The ideal surface roughness for sapphire wafers depends on the temperature and crystal orientation. C-plane sapphire is ideal for applications demanding great optical quality and durability.
The greatest option is C-plane sapphire. Additionally, this substance is rather abrasive. It also possesses superb chemical and electrical qualities.
Materials for C-plane sapphire wafers come in a variety of thicknesses and orientations. They are perfect for the production of semiconductors because of their extreme hardness. Additionally, they have low heat conductivity and resistance. These materials, which differ from other substrates in that they are also scratch-resistant, are advantageous for many microelectronic applications.
The demand for semiconductors is the main factor driving the price of sapphire wafers. The need for high-performance semiconductor devices is growing as LED and mobile phone usage increases. Additionally, the increasing use of sapphires in automotive applications is anticipated to fuel growth over the course of the projected period.
It has been possible to create solar cells and light-emitting diodes using C-plane sapphire wafer technology. LEDs' overall size and weight are decreased by these materials' low thermal expansion coefficient, electrical insulation, and high surface area to volume ratio.
The perfect substrate for heteroepitaxial silicon growth is C-plane sapphire. The C-plane sapphire wafer materials' crystal structure makes it simple to build nanostructured silicon. By using computer simulation, the asymmetric development of silicon on a sapphire substrate can be easily fixed.
Each crystal plane underwent the same procedure ten times. Additionally, compared to previous crystal planes, the C-plane demonstrated noticeably improved processing quality. Other crystal planes were unable to produce the non-destructive surface effect that this procedure did.
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